Back MRAM Catalan Magnetoresistive Random Access Memory German MRAM Spanish MRAM Estonian MRAM Finnish Magnetic Random Access Memory French MRAM ID Magnetoresistive Random Access Memory Italian 磁気抵抗メモリ Japanese 자기 저항 메모리 Korean
| Computer memory and data storage types |
|---|
| Volatile |
| Non-volatile |
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains.[1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory.[2] Currently, memory technologies in use such as flash RAM and DRAM have practical advantages that have so far kept MRAM in a niche role in the market.
- ^ United States 4731757A, "Magnetoresistive memory including thin film storage cells having tapered ends"
- ^ Akerman, J. (2005). "APPLIED PHYSICS: Toward a Universal Memory". Science. 308 (5721): 508–510. doi:10.1126/science.1110549. PMID 15845842. S2CID 60577959.